Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Rami Khazaka (1) , Yann Bogumilowicz (1) , Denis Rouchon (1) , Hervé Boutry (1) , Zdenek Chalupa (1) , Valérie Lapras (1) , Bernard Prévitali (1) , Nicolas Chevalier (2) , Anne Marie Papon , Sylvain David (3) , Sylvain Maitrejean (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 XLIM-SRF - Systèmes RF
3 LTM - Laboratoire des technologies de la microélectronique

In this contribution, we report on the growth of Ge inside extremely thin 16-nm thick cavities through selective lateral growth of Ge on 300 mm silicon-on-insulator (0 0 1) substrates. We showed that the density of defects depends on the cavity shape, with extended defects such as micro-twins and stacking faults observed on the top surface along the h1 1 0 i directions when the Si/Ge growth interface is along the h1 1 0 i directions. The optimization of the cavity shape, by tuning the etching conditions, leads to a significant reduction of the defects in the Ge nanostructures, and this approach paves the road towards the co-integration of Si and Ge based devices.

Domains: Physics [physics]

Rami Khazaka, Yann Bogumilowicz, Denis Rouchon, Hervé Boutry, Zdenek Chalupa, et al.. Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges. Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩. ⟨hal-01947859⟩