Graphene synthesis on SiO2 using pulsed laser deposition with bilayer predominance

Abstract : Here we report the low-defect synthesis of bilayer graphene film on SiO 2 with a nickel catalyst using pulsed laser deposition combined with rapid thermal annealing. A parametric study was performed with various initial amorphous carbon (a-C) film thicknesses and annealing temperatures and a fixed nickel catalyst film thickness. Raman spectra and mapping over large areas of up to 100 × 100 μm² were used to investigate the structure and the defects of graphene films. Optimal conditions for graphene growth were an initial a-C film thickness of 2 nm and an annealing temperature of 900°C. Results showed that 76% of the optimized film contained graphene bilayers, and 18% of the optimized film contained graphene monolayers. A transmittance of 87% at 550 nm is observed without any transfer process from the SiO 2 substrate. This paper presents experimental guidelines for optimal synthesis conditions to control graphene growth by pulsed laser deposition.
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Soumis le : mardi 30 juillet 2019 - 11:31:12
Dernière modification le : vendredi 23 août 2019 - 15:37:40

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Yannick Bleu, Florent Bourquard, Valentin Gartiser, Anne-Sophie Loir, Borja Caja-Munoz, et al.. Graphene synthesis on SiO2 using pulsed laser deposition with bilayer predominance. Materials Chemistry and Physics, Elsevier, 2019, 238, pp.121905. ⟨10.1016/j.matchemphys.2019.121905⟩. ⟨hal-02197284⟩

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